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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1793
SWITCHING N- AND P-CHANNEL POWER MOS FET
DESCRIPTION
The PA1793 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application.
PACKAGE DRAWING (Unit: mm)
8 5 N-Channel 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 P-Channel 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max.
+0.10 -0.05
FEATURES
* Low on-state resistance N-Channel RDS(on)1 = 69 m MAX. (VGS = 4.5 V, ID = 1.5 A)
1.44
6.0 0.3 4.4 0.8
RDS(on)2 = 72 m MAX. (VGS = 4.0 V, ID = 1.5 A) P-Channel RDS(on)1 = 115 m MAX. (VGS = -4.5 V, ID = -1.5 A) RDS(on)2 = 120 m MAX. (VGS = -4.0 V, ID = -1.5 A) RDS(on)3 = 190 m MAX. (VGS = -2.5 V, ID = -1.0 A) * Low input capacitance N-Channel Ciss = 160 pF TYP. P-Channel Ciss = 370 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
1.8 Max.
RDS(on)3 = 107 m MAX. (VGS = 2.5 V, ID = 1.0 A)
0.15
0.05 Min.
0.5 0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
+0.10 -0.05
EQUIVALENT CIRCUIT ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
Gate Body Diode Gate Body Diode Drain Drain
PA1793G
Gate Protection Diode
Source
Gate Protection Diode
Source
N-Channel
P-Channel
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G16059EJ1V0DS00 (1st edition) Date Published September 2002 NS CP(K) Printed in Japan
(c)
2002
PA1793
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation (1 unit)
Note2
Symbol VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
N-Channel 20 12 3 12 1.7 2.0 150
P-Channel -20
Unit V V A A W W C C
m 12 m3 m
12
Total Power Dissipation (2 units) Note2 Channel Temperature Storage Temperature
-55 to +150
Notes 1. PW 10 s, Duty Cycle 1% 2 2. Mounted on ceramic substrate of 5500 mm x 2.2 mm, TA = 25C
2
DataSheet G16059EJ1V0DS
PA1793
ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.)
A) N-Channel
Characteristice Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 16 V VGS = 4.0 V ID = 3.0 A IF = 3.0 A, VGS = 0 V IF = 3 A, VGS = 0 V di/dt = 50 A/s Test Conditions VDS = 20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID =1.5 A VGS = 4.5 V, ID = 1.5 A VGS = 4.0 V, ID = 1.5 A VGS = 2.5 V, ID = 1.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V, ID = 1.5 A VGS = 4.0 V RG = 10 0.5 1.0 55 57 78 160 60 40 17 50 86 80 3.1 0.7 1.4 0.86 70 12 69 72 107 1.0 MIN. TYP. MAX. 10 Unit
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
10
1.5
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL VGS PG. RG
Wave Form
VGS
0 10% VGS 90%
IG = 2 mA 50
RL VDD
VDD VDS
90% 90% 10% 10%
PG.
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
DataSheet G16059EJ1V0DS
3
PA1793
B) P-Channel
Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = -10 V VGS = -4.0 V ID = -3.0 A IF = 3.0 A, VGS = 0 V IF = 3 A, VGS = 0 V di/dt = 10 A/s Test Conditions VDS = -20 V, VGS = 0 V VGS = MIN. TYP. MAX. -10 Unit
A A
V S
m 12 V, VDS = 0 V
-0.5 1.0 75 80 116 370 110 40 120 260 410 360 3.4 1.3 1.6 0.86 24 1.5 -1.0
m 10
-1.5
VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -1.5 A VGS = -4.5 V, ID = -1.5 A VGS = -4.0 V, ID = -1.5 A VGS = -2.5 V, ID = -1.0 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -10 V, ID = -1.5 A VGS = -4.0 V RG = 10
115 120 190
m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL VGS PG. RG
Wave Form
VGS (-)
0 10% VGS 90%
IG = -2 mA 50
RL VDD
VDD VDS (-)
90% 90% 10% 10%
PG.
VGS (-) 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
4
DataSheet G16059EJ1V0DS
PA1793
TYPICAL CHARACTERISTICS (TA = 25C)
A) N-Channel
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
2.8
100
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
Mounted on ceramic substrate of 2 5500 mm x 2.2 mm 2 units
dT - Percentage of Rated Power - %
80
PT - Total Power Dissipation - W
2.4 2 1.6 1.2 0.8 0.4 0
60
40
1 unit
20
0 0 25 50 75 100 125 150 175
0
25
50
75
100
125
150
175
TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA
100
Mounted on ceramic substrate 2 of 5500 mm x 2.2 mm , 1 unit ID(pulse)
TA - Ambient Temperature - C
10
ID - Drain Current - A
PW = 100 s
ID(DC)
1
DC
RDS(on) limited (at VGS = 4.5 V)
1 ms 10 m s 100 m s
0.1
TA = 25C Single pulse
Power dissipation limited
0.01 0.1 1 10 100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
100 Rth(ch-A) = 73.5C/W 10
1
0.1
Mounted on ceramic substrate of 2 5500 mm x 2.2 mm Single pulse, 1 unit, TA = 25C
1m 10 m 100 m 1 10 100 1000
0.01 100
PW - Pulse Width - s
DataSheet G16059EJ1V0DS
5
PA1793
A) N-Channel
FORWARD TRANSFER CHARACTERISTICS
10 VDS = 10 V Pulsed
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
14 VGS = 4.5 V 12 4.0 V
ID - Drain Current - A
ID - Drain Current - A
1
10 8 2.5 V 6 4 Pulsed 2
0.1
Tch = 125C 75C 25C -25C
0.01 0 1 2 3
0 0 0.5 1 1.5 2 2.5 3
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
VDS = 10 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m
200
100
150
ID = 3 A
10
100 1.5 A 50 Pulsed 0 0 2 4 6 8 10 12
1
Tch = 125C 75C 25C -25C
0.1 0.01
0.1
1
10
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m
150 1.2
VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate Cut-off Voltage - V
1 0.8 0.6 0.4 0.2 0 VDS = 10 V ID = 1 mA
100 VGS = 2.5 V 4.0 V 50 4.5 V
Pulsed 0 0.1 1 10 100
-50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
6
DataSheet G16059EJ1V0DS
PA1793
A) N-Channel
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
150 100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
IF - Diode Forward Current - A
10 VGS = 4.5 V 1 0V
100 VGS = 2.5 V 4.0 V
50
4.5 V
0.1
Pulsed 0 -50 0 50 100 150 0.01 0 0.5
Pulsed 1
Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
1000
VF(S-D) - Source to Drain Voltage - V SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz
VDD = 10 V VGS = 4 V RG = 10 td(off) 100 tf tr 10 td(on)
Ciss 100 Coss Crss
10 0.1 1 10 100
1 0.1 1 10 100
VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
1000
ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERITICS
20 5 VDD = 16 V 10 V 4V
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
16
4
100
12 VGS
3
8
2
10
di/dt = 50 A/s VGS = 0 V 1 0.1 1 10 100
4
VDS ID = 3 A
1
0 0 1 2 3 4
0
IF - Diode Forward Current - A
QG - Gate Charge - nC
DataSheet G16059EJ1V0DS
7
VGS - Gate to Source Voltage - V
PA1793
B) P-Channel
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
2.8
100
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
Mounted on ceramic substrate of 5500 mm 2 x 2.2 m m 2 units
dT - Percentage of Rated Power - %
80
PT - Total Power Dissipation - W
2.4 2 1.6 1.2 0.8 0.4 0
60
40
1 unit
20
0 0 25 50 75 100 125 150 175
0
25
50
75
100
125
150
175
TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA
- 100
TA - Ambient Temperature - C
Mounted on ceram ic substrate 2 of 5500 m m x 2.2 mm , 1 unit ID(pulse)
- 10
PW = 100 s
ID - Drain Current - A
ID(DC) 1 ms
-1
DC RDS(on) limited (at VGS = -4.5 V)
10 ms 100 ms
- 0.1
Power dissipation limited TA = 25C Single pulse
- 0.01 - 0.1
-1
- 10
- 100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 0 rth(t) - Transient Thermal Resistance - C/W
100 R th(ch-A ) = 7 3.5 C /W 10
1
0.1
M oun ted o n ceram ic sub strate of 2 550 0 m m x 2.2 m m S ingle pulse, 1 un it, T A = 2 5C 1m 10 m 100 m 1 10 100 1000
0.01 100
PW - Pulse Width - s
8
DataSheet G16059EJ1V0DS
PA1793
B) P-Channel
FORWARD TRANSFER CHARACTERISTICS
- 10 VDS = -10 V Pulsed
- 14 VGS = -4.5 V - 12 -4.0 V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
ID - Drain Current - A
ID - Drain Current - A
-1
Tch = 125C 75C 25C -25C
- 10 -8 -6 -4 -2
-2.5 V
- 0.1
Pulsed
- 0.01 0 -1 -2 -3
0 0 - 0.5 -1 - 1.5 -2 - 2.5 -3
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
VDS = -10 V Pulsed
VDS - Drain to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m
300 250 200 150 100 - 1 .5 A 50 P u ls e d 0 0 -2 -4 -6 -8 - 10 - 12
100
ID = - 3 A
10
1
Tch = 125C 75C 25C -25C
0.1 - 0.01
- 0.1
-1
- 10
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
300
VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
- 1.4 - 1.2
VGS(off) - Gate Cut-off Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
250 200 150 100 50 0 - 0 .1 V G S = - 2 .5 V - 4 .0 V - 4 .5 V P u ls e d -1 - 10 - 100
-1 - 0.8 - 0.6 - 0.4 - 0.2 0 -50 0 50 100 150 VDS = -10 V ID = -1 m A
ID - Drain Current - A
Tch - Channel Temperature - C
DataSheet G16059EJ1V0DS
9
PA1793
) P-Channel
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
200 - 100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
IF - Diode Forward Current - A
150
V G S = - 2 .5 V - 4 .0 V
- 10
VGS = -4.5 V -1 0V - 0.1
100 - 4 .5 V 50
P u ls e d 0 -5 0 0 50 100 150 - 0.01 0 0.5
Pulsed 1
Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000 10 00 0
VF(S-D) - Source to Drain Voltage - V SWITCHING CHARACTERISTICS
Ciss
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
V D D = -1 0 V V G S = -4 V R G = 10 10 00 td(off) tf tr 10 0 td(on)
100
C oss
C rss VGS = 0 V f = 1 M Hz 10 - 0.1
-1
- 10
- 100
10 - 0.1
-1
- 10
- 10 0
VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
100 - 20
ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERITICS
-5
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
- 16
-4
- 12 VGS -8
-3
10
-2
di/dt = 10 A/s VGS = 0 V 1 - 0.1
-4
VDS
-1
0 -1 - 10 - 100 0 1 2 3 4
0
IF - Diode Forward Current - A
QG - Gate Charge - nC
10
DataSheet G16059EJ1V0DS
VGS - Gate to Source Voltage - V
VDD = 16 V 10 V 4V
ID = 3 A
PA1793
[MEMO]
DataSheet G16059EJ1V0DS
11
PA1793
* The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
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